| PART |
Description |
Maker |
| OM6414SP3 OM6415SP3 OM6413SP3 OM6416SP3 |
TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 200V V(BR)DSS | 4A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 200伏五（巴西）直| 4A条（丁）
TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 400V V(BR)DSS | 2.5A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 400V五（巴西）直| 2.5AI（四
TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 100V V(BR)DSS | 6A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 100V的五（巴西）直| 6A条（丁）
TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 500V V(BR)DSS | 2A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 500V五（巴西）直|甲（丁）
|
Samwha Electronics
International Rectifier, Corp.
|
| PF0027 |
MOS FET Power Amplifier Module
MOSFET Power Ampllfier Module for E-TACS Handy Phone
|
Renesas Technology
Hitachi Semiconductor
|
| APT10M11JVRU3 |
142 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
ISOTOP BUCK CHOPPER MOSFET POWER MODULE
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| APTM120DA29TG |
Boost chopper MOSFET Power Module 34 A, 1200 V, 0.348 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
http://
|
| CPW256A CPW255A |
TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 500V V(BR)DSS | 17.5A I(D) 晶体管| MOSFET功率模块|全桥| 500V五（巴西）直| 17.5AI（四
TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 500V V(BR)DSS | 11A I(D)
|
Electronic Theatre Controls, Inc.
|
| APTC80A15SCTG |
Phase leg Serie & SiC parallel diodes Super Junction MOSFET Power Module 28 A, 800 V, 0.15 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Phase leg Serie & SiC parallel diodes Super Junction MOSFET Power Module
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTC60AM18SC |
143 A, 600 V, 0.018 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
|
ADPOW[Advanced Power Technology]
|
| APTC60DDAM70T3G |
Dual boost chopper Super Junction MOSFET Power Module 39 A, 600 V, 0.07 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| APTM20DUM04G |
Dual common source MOSFET Power Module 372 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| APTC60HM70T3G |
Full - Bridge Super Junction MOSFET Power Module 39 A, 600 V, 0.07 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
